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| ZXMN4A06G 40V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 40V; RDS(ON)= 0.05 DESCRIPTION ID= 7A This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * SOT223 package SOT223 APPLICATIONS * DC - DC Converters * Audio Output Stages * Relay and Solenoid driving * Motor control ORDERING INFORMATION DEVICE ZXMN4A06GTA ZXMN4A06GTC REEL SIZE 7" 13" TAPE WIDTH 12mm 12mm QUANTITY PER REEL 1000 units 4000 units DEVICE MARKING * ZXMN 4A06 Top View ISSUE 1 - MAY 2002 1 ZXMN4A06G ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current V GS =10V; T A =25C(b) V GS =10V; T A =70C(b) V GS =10V; T A =25C(a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T A =25C (a) Linear Derating Factor Power Dissipation at T A =25C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID LIMIT 40 20 7.0 5.6 5.0 22 5.4 22 2.0 16 3.9 31 -55 to +150 UNIT V V A I DM IS I SM PD PD T j :T stg A A A W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating 25mm x 25mm FRA PCB, D=0.05 pulse width = 10 s - pulse width limited by maximum junction temperature. SYMBOL R JA R JA VALUE 62.5 32.2 UNIT C/W C/W ISSUE 1 - MAY 2002 2 ZXMN4A06G CHARACTERISTICS ID Drain Current (A) 10 Limited 1 RDS(on) Max Power Dissipation (W) 2.0 1.6 1.2 0.8 0.4 0.0 0 20 40 60 80 100 120 140 160 DC 1s 100ms 10ms Single Pulse 1ms 100s 100m 10m Tamb= 25 C 1 V DS Drain-Source Voltage (V) 10 Temperature ( C) Safe Operating Area Thermal Resistance ( C/W) Tamb= 25 C Derating Curve Maximum Power (W) 70 60 50 40 30 20 10 0 100 1m 10m 100m 1 D= 0.2 Single Pulse D= 0.05 D= 0.1 D= 0.5 100 Single Pulse Tamb= 25 C 10 Pulse Width (s) 10 100 1k 1 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation ISSUE 1 - MAY 2002 3 ZXMN4A06G ELECTRICAL CHARACTERISTICS (at TA = 25C unless otherwise stated) PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) V SD t rr Q rr 0.8 19.86 16.36 0.95 V ns nC T J =25C, I S =2.5A, V GS =0V T J =25C, I F =2.5A, di/dt= 100A/s t d(on) tr t d(off) tf Qg Q gs Q gd 2.55 4.45 28.61 7.35 18.2 2.1 4.5 ns ns ns ns nC nC nC V DS =30V,V GS =10V, I D =2.5A (refer to test circuit) V DD =30V, I D =2.5A R G =6.0 , V GS =10V (refer to test circuit) C iss C oss C rss 770 92 61 pF pF pF V DS =40 V, V GS =0V, f=1MHz V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs 8.7 1.0 0.050 0.075 S 40 1 100 V A nA V I D =250 A, V GS =0V V DS =40V, V GS =0V V GS =20V, V DS =0V I =250 A, V DS = V GS D SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V GS =10V, I D =4.5A V GS =4.5V, I D =3.2A V DS =15V,I D =2.5A NOTES (1) Measured under pulsed conditions. Width300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - MAY 2002 4 ZXMN4A06G TYPICAL CHARACTERISTICS ID Drain Current (A) ID Drain Current (A) T = 25 C 10V 4V 3.5V 3V 2.5V T = 150 C 10V 4V 3.5V 3V 2.5V 2V V GS 1.5V 10 10 1 V GS 2V 1 0.1 0.1 0.1 1 10 V DS Drain-Source Voltage (V) 0.1 1 10 V DS Drain-Source Voltage (V) Output Characteristics 1.8 Output Characteristics Normalised RDS(on) and VGS(th) ID Drain Current (A) 10 T = 150 C T = 25 C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 0 V GS = 10V ID = 4.5A RDS(on) 1 V DS = 10V V GS(th) V GS = V DS ID = 250uA 1 V GS Gate-Source Voltage (V) 1.5V 2V T = 25 C V GS 2.5V 3V 3.5V 2 3 4 50 100 150 Tj Junction Temperature ( C) Typical Transfer Characteristics RDS(on) Drain-Source On-Resistance () Normalised Curves v Temperature ISD Reverse Drain Current (A) 10 10 T = 150 C 1 T = 25 C 1 0.1 1 10 4V 10V 0.1 0.2 ID Drain Current (A) V SD Source-Drain Voltage (V) 0.4 0.6 0.8 1.0 1.2 1.4 On-Resistance v Drain Current Source-Drain Diode Forward Voltage ISSUE 1 - MAY 2002 5 ZXMN4A06G TYPICAL CHARACTERISTICS ISSUE 1 - MAY 2002 6 ZXMN4A06G PACKAGE OUTLINE PAD LAYOUT DETAILS 4.6 2.0 min (3x) 2.3 6.8 1.5 min (3x) 2.0 min 3.8 min PACKAGE DIMENSIONS MILLIMETRES DIM MIN A A1 A2 b b2 C 0.02 1.55 0.66 2.90 0.23 MAX 1.80 0.10 1.65 0.84 3.10 0.33 D e e1 E E1 L DIM MIN 6.30 MAX 6.70 MILLIMETRES 2.30 BASIC 4.60 BASIC 6.70 3.30 0.90 7.30 3.70 (c) Zetex plc 2002 Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 USA Telephone: (631) 360 2222 Fax: (631) 360 8222 Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - MAY 2002 7 |
Price & Availability of ZXMN4A06G
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